Abstract We have fabricated two-dimensional h-BN/WS2 van der Waals heterojunctions by stacking h-BN and WS2 monolayers, and experimentally measured the valence band offset (VBO) of h-BN/WS2 heterojunction by X-ray photoelectron spectroscopy (XPS). The h-BN and WS2 monolayers band gaps and the measured value of VBO were used to determine the conduction band offset (CBO). The measurement results of VBO and CBO are 3.39 ± 0.15 eV and 0.57 ± 0.15 eV, respectively, revealing a type-I band alignment. It is urgent to measure the band alignment parameters of h-BN/WS2 heterojunctions for analyzing and designing h-BN/WS2 based devices.

中文翻译：

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通过 X 射线光电子能谱测定二维 h-BN/WS2 范德华异质结中的能带排列

摘要 我们通过堆叠 h-BN 和 WS2 单层制备了二维 h-BN/WS2 范德华异质结，并通过 X 射线光电子能谱 (XPS) 实验测量了 h-BN/WS2 异质结的价带偏移 (VBO)。 ）。h-BN 和 WS2 单层带隙和 VBO 的测量值用于确定导带偏移 (CBO)。VBO 和 CBO 的测量结果分别为 3.39 ± 0.15 eV 和 0.57 ± 0.15 eV，表明 I 型带对齐。迫切需要测量 h-BN/WS2 异质结的能带对准参数，以分析和设计基于 h-BN/WS2 的器件。