Abstract Temperature-dependent infrared transmission spectroscopy has been applied to study the optical properties of Hg0.815Cd0.185Se thin film grown by molecular beam epitaxy on GaSb (2 1 1)B substrate. Discrepancies were observed between the measured optical bandgaps and the calculated values based on the previously reported empirical expression for the energy bandgap E g x , T of Hg1-xCdxSe. A new empirical expression has been established based on ab initio calculations, and the results are shown to be in a good agreement with the experimental data of this study. By comparing both expressions with all of known experimental data for x ≤ 0.354 from other studies over the temperature range of 0

中文翻译：

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MBE 生长的 Hg1-Cd Se 能带隙的理论和实验研究

摘要 温度相关红外透射光谱已被用于研究通过分子束外延在GaSb (2 1 1)B 衬底上生长的Hg0.815Cd0.185Se 薄膜的光学特性。在测量的光学带隙和基于先前报告的 Hg1-xCdxSe 的能带隙 E gx , T 的经验表达式的计算值之间观察到差异。基于 ab initio 计算建立了新的经验表达式，结果与本研究的实验数据吻合良好。通过将两个表达式与所有已知的实验数据进行比较，x ≤ 0.354 来自其他研究在 0 的温度范围内