The junction temperature of power semiconductors is a critical parameter during reliability evaluation. The incorporation of long-term mission profiles, such as power loadings and ambient temperature, into lifetime and reliability evaluations of power semiconductors increases the computational burden. Thus, there is an urgent need for a more accurate method for junction temperature acquisition. Current methods for junction temperature calculation are computationally inefficient and do not comprehensively incorporate long-term factors into junction temperature calculation and power semiconductor reliability evaluation. Here, a junction temperature calculation method is proposed that enables reliability evaluation for insulated gate bipolar transistor (IGBT) power semiconductors. This approach calculates the IGBT module junction temperature on the basis of an electro-thermal analogy using Gauss–Seidel iteration. When compared with electrical–thermal simulation and other numerical calculation methods, the proposed method guarantees accuracy, while greatly reducing the computational time and load. A performance comparison between the proposed method, electro-thermal simulation based on a Fuji IGBT simulator, and experimental results was carried out using a three-phase DC/AC inverter as a case study.

中文翻译：

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电力电子变换器中功率半导体可靠性评估的数值结温计算方法

功率半导体的结温是可靠性评估过程中的一个关键参数。将长期任务配置文件（例如功率负载和环境温度）纳入功率半导体的寿命和可靠性评估会增加计算负担。因此，迫切需要一种更准确的结温采集方法。目前的结温计算方法计算效率低，并且没有将长期因素全面纳入结温计算和功率半导体可靠性评估中。在这里，提出了一种结温计算方法，可以对绝缘栅双极晶体管 (IGBT) 功率半导体进行可靠性评估。这种方法基于使用高斯-赛德尔迭代的电热类比计算 IGBT 模块结温。与电热模拟等数值计算方法相比，该方法在保证精度的同时，大大减少了计算时间和负荷。使用三相 DC/AC 逆变器作为案例研究，对所提出的方法、基于富士 IGBT 模拟器的电热模拟和实验结果进行了性能比较。