The authors have proposed a 3-5 GHz ultra-wideband (UWB) low power and low noise amplifier (LNA) with the TSMC 0.18 μm RF CMOS process, which uses a novel dual input matching network for wideband matching. We have used a current-reuse g_m-boosted common-gate topology and shunt-shunt feedback common-source output buffer to improve gain and noise figure with low power dissipation. The proposed dual input matching g_m-boosted common-gate LNA has been efficient bandwidth to cover UWB band. It has required less inductors or amplification stages to increase bandwidth as compared with the conventional UWB common-gate LNAs. The broadband input stage has been able to be switched to three frequency bands with capacitive switches. The capacitive switch has replaced a large inductor to resonate at lower frequency band. The band-selective LNA has shown linearity improvement by attenuating the undesired interference of a wideband gain circuit and using less inductors. Simulated performance has shown the gains of 15.9, 17.6, and 16.9 dB, and the noise figures of 3.38, 3.28, and 3.27 dB at the 3.432, 3.960, and 4.488 GHz frequency bands, respectively. The proposed UWB LNA has consumed 5 mW from a 1.8-V power supply.

中文翻译：

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具有电流复用GM提升技术的频带选择CMOS低噪声放大器，适用于3-5 GHz UWB接收器

作者提出了一种采用TSMC 0.18μmRF CMOS工艺的3-5 GHz超宽带（UWB）低功耗和低噪声放大器（LNA），该工艺使用新颖的双输入匹配网络进行宽带匹配。我们使用了电流重用的g _m增强型共栅拓扑和分流-分流反馈共源输出缓冲器，以降低功耗并提高增益和噪声系数。建议的双输入匹配g _m增强型共栅LNA已经成为覆盖UWB频段的有效带宽。与传统的UWB共栅LNA相比，它需要更少的电感器或放大级来增加带宽。宽带输入级已能够通过电容开关切换到三个频段。电容式开关已取代大型电感器，以在较低频段产生谐振。频带选择型LNA通过衰减宽带增益电路的不良干扰并使用更少的电感器，显示出线性度的改善。仿真性能显示，在3.432、3.960和4.488 GHz频带上，增益分别为15.9、17.6和16.9 dB，噪声系数分别为3.38、3.28和3.27 dB。拟议的UWB LNA从1.8V电源消耗了5mW的功率。