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Linear and quadratic magnetoresistance in the semimetalSiP2
Physical Review B ( IF 3.2 ) Pub Date : 2020-09-22 , DOI: 10.1103/physrevb.102.115145
Yuxing Zhou , Zhefeng Lou , ShengNan Zhang , Huancheng Chen , Qin Chen , Binjie Xu , Jianhua Du , Jinhu Yang , Hangdong Wang , Chuanying Xi , Li Pi , QuanSheng Wu , Oleg V. Yazyev , Minghu Fang

Multiple mechanisms for extremely large magnetoresistance (XMR) found in many topologically nontrivial/trivial semimetals have been theoretically proposed, but experimentally it is unclear which mechanism is responsible in a particular sample. In this paper, by the combination of band structure calculations, numerical simulations of magnetoresistance (MR), Hall resistivity, and de Haas-van Alphen (dHvA) oscillation measurements, we studied the MR anisotropy of SiP2 which is verified to be a topologically trivial, incomplete compensation semimetal. It was found that as magnetic field H is applied along the a axis, the MR exhibits an unsaturated nearly linear H dependence, which was argued to arise from incomplete carriers compensation. For the H[101] orientation, an unsaturated nearly quadratic H dependence of MR up to 5.88×104% (at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the kx direction. Good agreement of the experimental results with the simulations based on the calculated Fermi surface (FS) indicates that the topology of FS plays an important role in its MR.

中文翻译:

半金属SiP2中的线性和二次磁阻

在理论上已经提出了在许多拓扑非平凡/平凡的半金属中发现的极大磁阻(XMR)的多种机理,但在实验上尚不清楚哪种机理在特定样品中起作用。本文通过结合能带结构计算,磁阻(MR),霍尔电阻率和de Haas-van Alphen(dHvA)振荡测量的数值模拟,研究了Mr的各向异性。P2经验证是拓扑上琐碎的,不完全补偿的半金属。发现作为磁场 H 沿 一种 轴,MR表现出不饱和的近似线性 H 依赖,这被认为是由不完全的承运人补偿引起的。为了H[101] 方向,不饱和的几乎二次的 H MR的依赖性 5.88×104 (在1.8 K,31.2 T时),并观察到了电阻率引起的场上上升行为,这是由于存在沿空洞延伸的开孔轨道所致。 ķX方向。实验结果与基于计算的费米表面(FS)的仿真结果吻合良好,表明FS的拓扑结构在其MR中起着重要作用。
更新日期:2020-09-23
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