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Influence of Carrier Density and Energy Barrier Scattering on a High Seebeck Coefficient and Power Factor in Transparent Thermoelectric Copper Iodide
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-09-22 , DOI: 10.1021/acsaem.0c01724
Peter P. Murmu 1 , Varun Karthik 1 , Zihang Liu 2 , Vedran Jovic 1, 3 , Takao Mori 2 , Wanli L. Yang 4 , Kevin E. Smith 5 , John V. Kennedy 1, 3
Affiliation  

Transparent thermoelectric materials offer a synergetic performance for energy harvesting as smart windows. Among them, p-type copper iodide (CuI) is preferred due to its low synthesis temperature, moderate conductivity and mobility, and high optical transparency. X-ray absorption spectroscopy results showed a pre-edge feature in the Cu 2p3/2 spectrum, which suggested the presence of Cu0-like defect states in γ-CuI films. Interface and grain boundaries of CuI and Cu0 act as a potential energy barrier for energy filtering of charge carriers, which along with the decrease in charge carrier density enhanced the Seebeck coefficient, α. The α value increased by 298% upon annealing at 100 °C, α = 789.5 μVK–1, which resulted in a 480% increase in the power factor (α2σ = 740.9 μWm–1 K–2). Our results showed that a high Seebeck coefficient resulted from a decrease in charge carrier density and energy filtering of charge carriers at the interface and grain boundaries in optically transparent (Tvisible ∼ 60–85%) γ-CuI films for energy harvesting as smart windows.

中文翻译:

透明热电碘化物中载流子密度和能垒散射对高塞贝克系数和功率因数的影响

透明的热电材料为智能窗户提供了能量收集的协同性能。其中,优选p型碘化铜(CuI),因为其合成温度低,适度的电导率和迁移率以及高光学透明性。X射线吸收光谱结果显示Cu 2p 3/2光谱具有前缘特征,这表明γ-CuI膜中存在类似Cu 0的缺陷态。CuI和Cu 0的界面和晶界充当电荷载流子能量过滤的势能垒,随着电荷载流子密度的降低,塞贝克系数α增大。在100°C退火时,α值增加298%,α= 789.5μVK– 1,这导致了功率因数增加了480%(α 2 σ= 740.9μWm -1 ķ -2)。我们的研究结果表明,高Seebeck系数是由于在透明的(T可见光约为60-85%)γ-CuI薄膜中,作为智能窗口的能量收集,电荷载流子密度的降低以及界面和晶界处电荷载流子的能量过滤而导致的。
更新日期:2020-10-26
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