Structural and Elastic Properties of α‐(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range,Physica Status Solidi (B) - Basic Solid State Physics

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Structural and Elastic Properties of α‐(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-09-23 , DOI: 10.1002/pssb.202000394
Anna Hassa ₁ , Philipp Storm ₁ , Max Kneiß ₁ , Daniel Splith ₁ , Holger von Wenckstern ₁ , Michael Lorenz ₁ , Marius Grundmann ₁

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Structural properties of rhombohedral α‐(Al_xGa_1−x)₂O₃ thin films grown by two combinatorial pulsed laser deposition (PLD) techniques are investigated for the entire composition range. One α‐(Al_xGa_1−x)₂O₃ thin film is deposited on a 2 inch in diameter large a‐plane sapphire substrate using the continuous composition spread (CCS) PLD technique to fabricate a thin film with varying Al content ranging between x = 0.13 and x = 0.84. Laterally homogeneous α‐(Al_xGa_1−x)₂O₃ thin films exhibiting discrete Al contents are fabricated using radially segmented PLD targets on (11.0) Al₂O₃. Independent of the PLD technique, for x ≈ 0.55, a change from relaxed to pseudomorphic growth is observed as confirmed by the evolution of in‐ and out‐of‐plane lattice constants. The crystal structure is studied depending on the cation composition by X‐ray diffraction confirming the fabrication of epitaxial, corundum‐structured thin films.

中文翻译：

在整个组成范围内（11.0）Al2O3衬底上的α-（AlxGa1-x）2O3薄膜的结构和弹性特性

在整个组成范围内，研究了通过两种组合脉冲激光沉积（PLD）技术生长的菱形α-（Al _x Ga _{1- x}）₂ O ₃薄膜的结构特性。使用连续成分扩展（CCS）PLD技术在直径为2英寸的大型a面蓝宝石衬底上沉积一个α-（Al _x Ga _{1- x}）₂ O ₃薄膜，以制造具有不同Al含量范围的薄膜在x = 0.13和x = 0.84之间。横向均匀α-（Al _x Ga _{1- x}）₂ O使用在（11.0）Al ₂ O ₃上径向分段的PLD靶材，制作了_3个显示出离散Al含量的薄膜。独立于PLD技术，对于X ≈0.55，从放宽至假晶生长的变化由入点和出的面内晶格常数的变化所证实观察到。通过X射线衍射研究了取决于阳离子组成的晶体结构，从而确认了外延，刚玉结构的薄膜的制备。

更新日期：2020-09-23

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