GaN/Al_0.5Ga_0.5N and InN/Al_0.5Ga_0.5N as a III‐nitride quantum dot semiconductor optical amplifiers (QD‐SOAs) are studied in detail in this paper. The optical gain, spontaneous emission rate, and lineshape function are calculated using non‐Markovian relaxation compared with Markovian one. Gain is then connected with the rate equations model to obtain a dB gain, output power, and shot noise in these SOAs. GaN peaked at 351 nm which is preferred in optical coherence tomography applications. InN is peaked at 1028 nm which can be used in gas detection and environmental pollution monitoring. Both structures studied have high gain and low noise and nearly equivalent TE and TM gain which makes them adequate for the use in both these two modes. These calculations show the importance of InN and GaN QD nanostructure in the applications.

中文翻译：

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GaN和InN量子点半导体光放大器之间的比较

GaN / Al _0.5 Ga _0.5 N和InN / Al _0.5 Ga _0.5本文详细研究了N作为III氮化物量子点半导体光放大器（QD-SOA）。与非马尔可夫弛豫相比，使用非马尔可夫弛豫来计算光学增益，自发发射率和线形函数。然后，将增益与速率方程模型联系起来，以获得这些SOA中的dB增益，输出功率和散粒噪声。GaN在351 nm达到峰值，这在光学相干断层扫描应用中是优选的。InN在1028 nm处达到峰值，可用于气体检测和环境污染监测。所研究的两种结构均具有高增益和低噪声，以及几乎等效的TE和TM增益，这使得它们足够用于这两种模式。这些计算表明InN和GaN QD纳米结构在应用中的重要性。