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Altered amplitude of low‐frequency fluctuations and regional homogeneity in drug‐resistant epilepsy patients with vagal nerve stimulators under different current intensity
CNS Neuroscience & Therapeutics ( IF 4.8 ) Pub Date : 2020-09-23 , DOI: 10.1111/cns.13449
Jin Zhu 1 , Cuiping Xu 1 , Xi Zhang 1 , Liang Qiao 1 , Xueyuan Wang 1 , Xiaohua Zhang 1 , Xiaoming Yan 1 , Duanyu Ni 1 , Tao Yu 1 , Guojun Zhang 1 , Yongjie Li 1
Affiliation  

The mechanisms of vagal nerve stimulation (VNS) for the treatment of drug‐resistant epilepsy (DRE) remain unclear. This study aimed to measure spontaneous brain activity changes caused by VNS in DRE patients using resting‐state functional MRI (rs‐fMRI).

中文翻译:


不同电流强度下迷走神经刺激器对耐药性癫痫患者低频波动幅度及区域均匀性的影响



迷走神经刺激(VNS)治疗耐药性癫痫(DRE)的机制仍不清楚。本研究旨在使用静息态功能 MRI (rs-fMRI) 测量 DRE 患者由 VNS 引起的自发大脑活动变化。
更新日期:2020-09-23
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