Flexible Near‐Infrared InGaSb Nanowire Array Detectors with Ultrafast Photoconductive Response Below 20 µs,Advanced Optical Materials

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Flexible Near‐Infrared InGaSb Nanowire Array Detectors with Ultrafast Photoconductive Response Below 20 µs
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2020-09-22 , DOI: 10.1002/adom.202001201
Dapan Li ₁ , SenPo Yip _{1,

2,

3} , Fangzhou Li ₁ , Heng Zhang _{1,

2} , You Meng ₁ , Xiuming Bu ₁ , Xiaolin Kang ₁ , Changyong Lan ₄ , Chuntai Liu ₅ , Johnny C. Ho _{1,

2,

3}

Affiliation

High‐performance flexible room‐temperature near‐infrared (NIR) photodetectors are one of the important components for image sensing, data communication, environmental monitoring, and bioimaging applications. However, there is still a lack of suitable device channel materials to provide high sensitivity as well as good mechanical flexibility for photodetection, particularly operating at the optical communication wavelength of 1550 nm. In this work, highly crystalline In_0.28Ga_0.72Sb nanowires (NWs) are successfully grown by the two‐step chemical vapor deposition method and assembled into high‐density regular NW parallel arrays on polyimide substrates. When they are constructed into photodetectors without using any p–n junctions, they exhibit the excellent responsivity up to 1520 A W⁻¹ and ultra‐fast response speed below 20 µs toward 1550 nm irradiation at room temperature, which constitutes a record high performance among all flexible NIR photodetectors reported in recent literature. Notably, these flexible NW parallel‐array photodetectors also display a superior mechanical flexibility and operation durability. They not only provide a stable photoresponse under illumination on–off cycles up to 1000 s, but also maintain the steady photocurrent without any significant degradation after 700 bending cycles. All these results evidently indicate the promising potential of these crystalline In_0.28Ga_0.72Sb NW parallel arrays for next‐generation flexible optoelectronic devices.

中文翻译：

灵活的近红外InGaSb纳米线阵列检测器，其超快光电导响应低于20 µs

高性能柔性室温近红外（NIR）光电探测器是图像传感，数据通信，环境监测和生物成像应用的重要组件之一。但是，仍然缺少合适的器件通道材料来提供高灵敏度以及良好的机械灵活性以进行光检测，尤其是在1550 nm的光通信波长下工作。在这项工作中，通过两步化学气相沉积法成功地生长了高度结晶的In _0.28 Ga _0.72 Sb纳米线（NWs），并在聚酰亚胺衬底上组装成高密度规则NW平行阵列。当不使用任何p–n结将它们构建到光电探测器中时，它们在高达1520 AW的电流下仍具有出色的响应能力室温下对1550 nm辐射具有^-1的超快响应速度和低于20 µs的超快响应速度，在最近的文献中报道的所有柔性NIR光电探测器中都具有创纪录的高性能。值得注意的是，这些灵活的NW平行阵列光电探测器还显示出卓越的机械灵活性和操作耐久性。它们不仅可以在高达1000 s的照明开-关周期下提供稳定的光响应，而且还可以在700个弯曲周期后保持稳定的光电流而没有任何明显的退化。所有这些结果显然表明，这些晶体In _0.28 Ga _0.72 Sb NW并联阵列在下一代柔性光电器件中具有广阔的发展前景。

更新日期：2020-11-18

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