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Ultra‐High Thermoelectric Performance in Bulk BiSbTe/Amorphous Boron Composites with Nano‐Defect Architectures
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2020-09-22 , DOI: 10.1002/aenm.202000757
Guangsai Yang 1, 2 , Ranming Niu 3 , Lina Sang 1, 4 , Xiaozhou Liao 3 , David R. G. Mitchell 5 , Ning Ye 2 , Jun Pei 6 , Jing‐Feng Li 6 , Xiaolin Wang 1, 4
Affiliation  

Based on the Seebeck and Peltier effects, state‐of‐the‐art bismuth telluride‐based thermoelectric materials, which are capable of direct and reversible conversion of thermal to electrical energy, have great potential in energy harvesting and solid‐state refrigerators. However, their widespread use is limited by their low conversion efficiency, which is determined by the dimensionless figure‐of‐merit (ZT). Significant enhancement of ZT is a great challenge owing to the common interdependence of electrical and thermal conductivity. Here, it is demonstrated that by incorporating nanoamorphous boron into the p‐type Bi0.5Sb1.5Te3, a record high ZT of 1.6 at 375 K is achieved. It is shown that a high density of nanostructures and dislocations due to the incorporation of the boron inclusions, leads to a significant reduction of thermal conductivity and improved charge transport. The findings represent an important step to further promote the development of thermoelectric technology and its widespread application in solid‐state refrigeration and power generation from waste heat.

中文翻译:

具有纳米缺陷结构的块状BiSbTe /非晶硼复合材料的超高热电性能

基于Seebeck和Peltier效应,先进的碲化铋热电材料能够将热能直接和可逆地转换为电能,在能量收集和固态冰箱中具有巨大的潜力。但是,它们的广泛使用受到转换效率低的限制,转换效率由无量纲的品质因数(ZT)决定。由于导电性和导热性的共同相互依赖关系,ZT的显着提高是一个巨大的挑战。在此证明,通过将纳米非晶态硼掺入p型Bi 0.5 Sb 1.5 Te 3中,在375 K时达到了创纪录的1.6的最高ZT。结果表明,由于掺入了硼夹杂物,纳米结构和位错的高密度导致导热系数的显着降低和电荷传输的改善。这些发现是进一步促进热电技术发展及其在固态制冷和废热发电中广泛应用的重要一步。
更新日期:2020-11-03
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