We report a facile but effective method to produce heterojunction diodes by simply depositing AGZO thin films on Si substrates, and investigate the influences of the thickness of AGZO layer on diode performances. AGZO layers are subjected to device studies to find a correlation between the thickness of AGZO and diode performances. The results suggest that a variation in the thickness of AGZO insignificantly affects structural, morphological, and optical properties while it can effectively enhance characteristics of devices. The diode with 125 nm of AGZO renders an improvement in the diode performance. It shows remarkable rectification properties with a I_forward/I_reverse of 8146 at ± 4 V, ${\varnothing }_B$ of 0.73 eV, and R_s of 0.89 kΩ. Compared to the values diode performances for undoped, Al-doped and Ga-doped ZnO based devices in the literature, undoubtedly, our results are promising, indicating that co-doped layers should also be considered in fabrication of thin-film based diodes.

我们报告了一种简单而有效的方法，只需在硅衬底上沉积AGZO薄膜即可生产异质结二极管，并研究AGZO层厚度对二极管性能的影响。对AGZO层进行了器件研究，以发现AGZO的厚度与二极管性能之间的相关性。结果表明，AGZO厚度的变化对结构，形态和光学性能的影响不明显，同时可以有效地增强器件的性能。AGZO为125 nm的二极管可改善二极管性能。它显示出显着的整流特性，在±4 V时，I_正向/ I_反向为8146，${\varnothing }_{乙}$的0.73电子伏特，且- [R_小号 ö ˚F0.89千欧。与文献中无掺杂，Al掺杂和Ga掺杂的ZnO器件的二极管性能值相比，毫无疑问，我们的结果是有前途的，这表明在薄膜二极管的制造中也应考虑共掺杂层。