Abstract Isothermal oxidation of (Hf-Ta-Zr-Nb)C high entropy carbide (HEC4) was performed using thermo-gravimetric analysis at 800−1100 °C in air. Polycrystalline oxide layers with multi-element oxides were observed, and their thickness increased with increasing oxidation temperature. Particular attention was paid to the microstructure and role of the interface. An amorphous and compact oxycarbide interlayer was observed between the oxide layer and the bulk carbide in oxidized HEC4, providing an effective diffusion barrier during oxidation. There was a through thickness distribution of the metals in the oxide layer, because of the different oxidation rates and outward diffusion of the cations.

中文翻译：

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多元元素和夹层对(Hf-Ta-Zr-Nb)C高熵陶瓷氧化行为的影响

摘要 使用热重分析在 800-1100 °C 空气中对 (Hf-Ta-Zr-Nb)C 高熵碳化物 (HEC4) 进行等温氧化。观察到具有多元素氧化物的多晶氧化物层，其厚度随着氧化温度的升高而增加。特别注意界面的微观结构和作用。在氧化 HEC4 中的氧化物层和块状碳化物之间观察到无定形且致密的碳氧化物中间层，在氧化过程中提供有效的扩散屏障。由于不同的氧化速率和阳离子的向外扩散，氧化物层中的金属具有贯穿厚度分布。