Abstract B-site aliovalent modification of AgNbO3 with a nominal composition of Ag(Nb1-xMx)O3-x/2 (x = 0.01, M = Ti, Zr and Hf) was prepared. The effects of dopants on microstructure, dielectric, ferroelectric and conduction properties were investigated. The results indicate that the introduction of acceptor dopant does not lead to grain coarsening. Zr4+ and Hf4+ doping are beneficial to stabilize the antiferroelectric phase of AgNbO3. Among all the samples, Ti4+ doped AgNbO3 has the minimum resistivity while Hf4+ doped AgNbO3 has the maximum resistivity, therefore, Hf4+ doped AgNbO3 has high BDS. The XPS results indicate that the conduction behaviour is associated with the concentration of oxygen vacancies. This work hints that acceptor dopant is also effective on the microstructure control and chemical modification of AgNbO3-based ceramics.

中文翻译：

---

B 位受主掺杂 AgNbO3 无铅反铁电陶瓷：掺杂剂对微观结构和击穿强度的影响

摘要 制备了标称组成为 Ag(Nb1-xMx)O3-x/2 (x = 0.01, M = Ti、Zr 和 Hf) 的 AgNbO3 的 B 位异价改性。研究了掺杂剂对微观结构、介电、铁电和导电性能的影响。结果表明，受体掺杂剂的引入不会导致晶粒粗化。Zr4+ 和 Hf4+ 掺杂有利于稳定 AgNbO3 的反铁电相。在所有样品中，Ti4+掺杂的AgNbO3的电阻率最小，Hf4+掺杂的AgNbO3的电阻率最大，因此Hf4+掺杂的AgNbO3具有较高的BDS。XPS 结果表明传导行为与氧空位的浓度有关。这项工作表明，受主掺杂剂对 AgNbO3 基陶瓷的微观结构控制和化学改性也很有效。