This paper presents the ionizing radiation effects on current–voltage (I–V) characteristics of Au/TiO₂/n-Si metal–insulator-semiconductor (MIS) structure. The TiO₂ film as the dielectric interface layer of Au/n-Si was deposited using RF magnetron sputtering method. The MIS structure was exposed to gamma irradiation from ⁶⁰Co source with the dose rate of 0.69 kGy/h, and it was irradiated in the range of 0–100 kGy. The electronic parameters such as barrier height (Φ_b0), ideality factor (n), series resistance (R_s), and interface state density (N_ss) of the MIS structure were calculated from the measured I–V data. Experimental results showed that all calculated parameters change with the irradiation dose rate. To determine current conduction mechanisms of the MIS structure, the In (I_F) vs In (V) and In (I_R) vs V^1/2 curves for all irradiation doses are plotted under both forward bias and reverse bias, respectively.

本文介绍了电离辐射对Au / TiO ₂ / n-Si金属-绝缘体-半导体（MIS）结构的电流-电压（IV）特性的影响。使用RF磁控溅射法沉积作为Au / n-Si的介电界面层的TiO ₂膜。MIS结构暴露于⁶⁰ Co辐射源的伽马射线辐照下， 剂量率为0.69 kGy / h，辐照范围为0–100 kGy。所述的电子参数，例如势垒高度（Φ _B0），理想因子（n）时，串联电阻（ř_小号），和界面态密度（Ñ _SSMIS结构的）是根据测得的I–V数据计算得出的。实验结果表明，所有计算出的参数均随辐照剂量率而变化。为了确定MIS结构的电流传导机理，分别在正向偏置和反向偏置下绘制了所有照射剂量的In（I _F）vs In（V）和In（I _R）vs V ^1/2曲线。