MXene belongs to the family of 2D carbides and nitrides. The controlling of process parameters is key to obtain high-quality MXene films. The layered structure of MXene is obtained successfully by tuning the process parameters which is confirmed through the presence of XRD peak (110) at 2 theta value of 60 degrees. Moreover, the accordion-like structure of MXene is confirmed through SEM which is also highly dependent on the process parameters. It is also observed that if the etchant with sufficient concentration is used for an optimised time the (002) peak gets shifted to a lower angle and confirms the increase in spacing of MXene layers to 12.92 Å. Further reduction in the etching time leads to a decrease in the d-spacing of MXene layers due to the presence of aluminium and the presence of defects corresponding to the unsuccessful removal of AlF₃ by-products which is confirmed by (106), (108) and (109) XRD peaks. However, the occurrence of (106), (108) and (109) peaks which correspond to the growth of AlF₃ is highly dependent on any variation in process parameters. The increase in the quantity also impacts the properties of MXene formed. It can be seen that increasing the quantity of hydrofluoric acid will lead to thicken the MXene layers. If etching is done for the greater quantity of HF, the toxicity is increased which leads to the greater number of fluorine groups which will lead to an increase in the number of defects in the MXene material. This paper also discusses the correlation of process parameters with that of the electrical properties of MXene layers. It is found that to get the best MXene layers in terms of structurally and electrically, the process parameters need to tune in such a way that the etching of aluminium can be done completely without increasing the fluorine content in the MXene. Herein, we report for the first time the fabrication of best optimised MXene film on the flexible polypropylene (PP) substrate using the best optimised parameters for supercapacitor applications and compared with the Polyethylene terephthalate (PET) and glass substrate results. The PP-supported MXene device exhibits lower contact resistance of 141 ohms and the areal capacitance of 82.6mF/cm² at 5 mV/s and capacitive retention of 73.3%. The study opens up new possible designs for the high-performance devices employing different flake sizes, morphologies of MXene and their combinations.

MXene属于2D碳化物和氮化物族。工艺参数的控制是获得高质量MXene薄膜的关键。通过调节工艺参数可以成功获得MXene的分层结构，该工艺参数通过在60度的2θ值处存在XRD峰（110）得以确认。而且，通过SEM证实了MXene的手风琴状结构，这也高度依赖于工艺参数。还观察到，如果在最佳时间内使用浓度足够的蚀刻剂，则（002）峰将移至较小的角度，并确认MXene层的间距增加至12.92。进一步减少蚀刻时间会导致MXene层的d间距减小，这是由于铝的存在和与AlF去除失败相对应的缺陷的存在通过（106），（108）和（109）XRD峰确认了_3种副产物。然而，与AlF ₃的生长相对应的（106），（108）和（109）峰的出现高度依赖过程参数的任何变化。数量的增加也影响所形成的MXene的性能。可以看出，增加氢氟酸的量将导致MXene层的增厚。如果对大量的HF进行蚀刻，则毒性增加，这导致更多的氟基团，这将导致MXene材料中的缺陷数量增加。本文还讨论了工艺参数与MXene层电性能的相关性。已经发现，为了在结构和电气方面获得最佳的MXene层，需要调整工艺参数，使得可以完全完成铝的蚀刻而不增加MXene中的氟含量。在这里 我们首次报告了使用超级电容器应用的最佳优化参数在柔性聚丙烯（PP）衬底上制造最佳优化MXene膜的方法，并将其与聚对苯二甲酸乙二酯（PET）和玻璃衬底的结果进行了比较。PP支持的MXene器件具有141 ohm的较低接触电阻和82.6mF / cm的面积电容²以5mV / s和73.3％保留电容。这项研究为采用不同薄片尺寸，MXene形态及其组合的高性能设备开辟了新的可能设计。