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Enhanced sputtering yield of nanostructured samples under Ar+ cluster bombardment
Vacuum ( IF 3.8 ) Pub Date : 2020-02-01 , DOI: 10.1016/j.vacuum.2019.109096
Vasiliy Pelenovich , Xiaomei Zeng , Wenbin Zuo , Alexander Tolstogouzov , Gennady Gololobov , Dmitriy Suvorov , Evgeniy Slivkin , Donghong Hu , Canxin Tian , Neena D , Dejun Fu , Bing Yang

Abstract Ar2900 clusters with energy in the range of 10.4–69 keV were used to bombard the surface of pressed Si nanopowder targets. High nonmonotonic sputtering yield is observed within the energy range of 10.4–34.5 keV, which is considered as enhanced by the finite size effect of the target particles. The cluster bombardment results in the sputtering of Si nanoparticles with a mean size of ca. 12 nm. The number of the sputtered nanoparticles is correlated with the sputtering yield within the energy range of 10.4–34.5 keV. Hence, their formation is associated with the finite size effect. Scanning electron microscopy revealed the formation of debris on the target surface starting at the cluster energy of 15.3 keV, which results in reducing the finite size effect and consequently the sputtering yield. Individual impacts of the argon clusters are observed as craters of 3–6 nm in diameter on the Si particles surface. The crater formation is considered to be responsible for the sputtering at the cluster energy in the range of 15.3–69 keV.

中文翻译:

在 Ar+ 簇轰击下提高纳米结构样品的溅射产率

摘要 使用能量在 10.4-69 keV 范围内的 Ar2900 团簇轰击压制的 Si 纳米粉体靶材的表面。在 10.4-34.5 keV 的能量范围内观察到高非单调溅射产额,这被认为是由靶粒子的有限尺寸效应增强的。团簇轰击导致平均尺寸为约 2 的 Si 纳米颗粒的溅射。12 纳米。溅射纳米粒子的数量与 10.4-34.5 keV 能量范围内的溅射产额相关。因此,它们的形成与有限尺寸效应有关。扫描电子显微镜显示,从 15.3 keV 的团簇能量开始,在靶表面上形成碎片,这导致有限尺寸效应降低,从而降低了溅射产率。氩簇的单个影响被观察到在 Si 颗粒表面上直径为 3-6 nm 的陨石坑。火山口的形成被认为是在 15.3-69 keV 范围内的簇能量溅射的原因。
更新日期:2020-02-01
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