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Absorbing Elements Based on a Uniform Resistive Film for the Implementation of a Wide Range of Radio Signal Power Attenuations
Russian Microelectronics Pub Date : 2020-03-10 , DOI: 10.1134/s106373971907014x
V. D. Sadkov , K. S. Fomina , A. V. Pil’kevich

Abstract

Rectangular and complex-shaped absorbing elements based on a uniform resistive film are used for constructing waveguide, coaxial, and microstrip attenuators. A decrease in the attenuator’s dimensions leads to difficulties in the implementation of low and high attenuations, which requires passing to absorbing elements based on piecewise uniform structures. In this work, topologies of small absorbing elements of the waveguide, coaxial, and microstrip attenuators are proposed to implement a wide range of radio signal power attenuations. They differ from the known elements of attenuators with a two-layer resistive film in terms of their lower temperature stability and sophisticated manufacturing technology. Such attenuation is achieved by using a single-layer resistive film with a central region having a high (cut) or low (conductor) specific resistance. A technique based on the rigorous method of conformal mappings for calculating the proposed absorbing elements is developed. In the considered particular cases, the obtained relations coincide with those known in the literature. Three-dimensional plots of radio signal power attenuation and normalized input resistance as functions of the normalized size of the cut or conductor of the central region are presented. A broad range of possibilities of the control for output parameters of absorbing elements are outlined. The working capacity of the technique is verified by modeling both the equivalent circuit parameters and output parameters of the absorbing elements, namely, input resistance and attenuation, as well as by the analysis of real samples of small add-on absorbing elements of microstrip attenuators with the proposed topologies. The modeling is carried out in the Russian Elcut software package.


中文翻译:

基于均匀电阻膜的吸收元件,可实现宽范围的无线电信号功率衰减

摘要

基于均匀电阻膜的矩形和复杂形状的吸收元件用于构造波导,同轴和微带衰减器。衰减器尺寸的减小导致实现低衰减和高衰减的困难,这需要传递到基于分段均匀结构的吸收元件。在这项工作中,提出了波导,同轴和微带衰减器的小吸收元件的拓扑结构,以实现宽范围的无线电信号功率衰减。它们与具有两层电阻膜的衰减器的已知元件的不同之处在于其较低的温度稳定性和复杂的制造技术。通过使用具有中心区域具有高(切口)或低(导体)比电阻的单层电阻膜来实现这种衰减。开发了一种基于严格的保形映射方法来计算所提出的吸收元素的技术。在所考虑的特定情况下,所获得的关系与文献中已知的关系一致。呈现了无线电信号功率衰减和归一化输入电阻随中心区域切口或导体归一化尺寸而变化的三维图。概述了吸收元件的输出参数的控制的广泛可能性。通过对吸收元件的等效电路参数和输出参数进行建模,从而验证了该技术的工作能力,即 输入电阻和衰减,以及通过分析具有建议拓扑的微带衰减器的小型附加吸收元件的实际样本进行分析。建模是在Russian Elcut软件包中进行的。
更新日期:2020-03-10
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