Soft error in SRAM cell is one of the major reliability concern under aerospace radiation environment. A soft error occurs in SRAM cell due to charged particle strikes on sensitive nodes. In this paper a radiation hardened asymmetric 10T (AS10T) SRAM cell is presented to enhance the soft error hardening. The proposed cell uses read decoupled path to improve read static noise margin (RSNM) and voltage booster connected between storage nodes to improve node capacitance and hence enhanced radiation hardening. The proposed AS10T cell has a 75.83% higher critical charge as compared to 6T SRAM cell. For validation of soft error hardening of the proposed cell soft error rate ratio with supply voltage and temperature change is calculated and it is found that the AS10T has 6.41× and 3.2× less soft error rate ratio compared to 6T SRAM cell respectively. To better assess soft-error resilience and performance of the cell we introduce reliability stability to energy area product (RSEAP) ratio as a performance metric. Our analysis indicates that AS10T cell has 2.83× 1.6× and 1.36× higher RSEAP as compared to 6T RD8T and AS8T SRAM cells respectively.

中文翻译：

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用于航空航天应用的软错误硬化非对称 10T SRAM 单元

SRAM 单元中的软错误是航空航天辐射环境下的主要可靠性问题之一。由于带电粒子撞击敏感节点，SRAM 单元中出现软错误。在本文中，介绍了一种辐射硬化非对称 10T (AS10T) SRAM 单元，以增强软错误硬化。所提出的单元使用读取解耦路径来改善读取静态噪声容限 (RSNM)，并使用连接在存储节点之间的升压器来改善节点电容，从而增强抗辐射能力。与 6T SRAM 单元相比，提议的 AS10T 单元的临界电荷高出 75.83%。为了验证所提出的单元软错误率随电源电压和温度变化的软错误硬化，我们发现 AS10T 的软错误率比 6T SRAM 单元分别低 6.41 倍和 3.2 倍。为了更好地评估单元的软错误恢复能力和性能，我们引入了可靠性稳定性与能量面积乘积 (RSEAP) 比率作为性能指标。我们的分析表明，与 6T RD8T 和 AS8T SRAM 单元相比，AS10T 单元的 RSEAP 分别高出 2.83×1.6 倍和 1.36 倍。