With the introduction of the NXE:3400B scanner, ASML has brought extreme ultraviolet lithography (EUV) to high-volume manufacturing (HVM). The high-EUV power of >200 W being realized with this system satisfies the throughput requirements of HVM, but also requires reconsideration of the imaging aspects of spectral purity, both from the details of the EUV emission spectrum and from the deep-ultraviolet (DUV) emission. We present simulation and experimental results for the spectral purity of high-power EUV systems and the imaging impact of this, both for the case of with and without a pellicle. Also, possible controls for spectral purity will be discussed, and an innovative method will be described to measure imaging impact of varying conversion efficiency (CE) and DUV. It will be shown that CE optimization toward higher source power leads to reduction in relative DUV content, and the small deltas in EUV source spectrum for higher power do not influence imaging. It will also be shown that resulting variations in DUV do not affect imaging performance significantly, provided that a suitable reticle black border is used. In summary, spectral purity performance is found to enable current and upcoming nodes of EUV lithography and to not be a bottleneck for further increasing power of EUV systems to well above 250 W.

中文翻译：

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大功率EUV光刻：光谱纯度和成像性能

随着NXE：3400B扫描仪的推出，ASML将极限紫外光刻（EUV）引入了大批量制造（HVM）。通过该系统实现的> 200 W的高EUV功率既满足了HVM的通量要求，又需要从EUV发射光谱的细节和深紫外线（DUV）的角度重新考虑光谱纯度的成像方面）发射。我们提供了具有和没有防护膜的情况下，大功率EUV系统的光谱纯度及其成像影响的仿真和实验结果。另外，将讨论光谱纯度的可能控制方法，并描述一种创新方法来测量变化转换效率（CE）和DUV的成像影响。可以看出，朝着较高源功率的CE优化导致相对DUV含量的减少，并且较高功率的EUV源光谱中的小变化不会影响成像。还将显示，如果使用合适的标线黑边框，DUV的最终变化不会显着影响成像性能。总而言之，发现光谱纯度性能可以使EUV光刻的当前节点和即将到来的节点成为可能，并且不会成为进一步将EUV系统的功率提高到远高于250 W的瓶颈。