Researches of I – V -characteristics and C-V -characteristics of structures fabricated on unannealed and annealed at high temperature ( t = 900 °C) p -Cd 1−x Zn x Te substrates have been carried out. The influence of the intrinsic point defects system of the base material p -Cd 1−x Zn x Te on the interface properties of ZnO:Al/ n -CdS/ p -Cd 1−x Zn x Te heterojunctions have been studied. The above structures have been fabricated by sequential deposition of CdS and ZnO:Al thin films on crystalline p -Cd 1−x Zn x Te by high-frequency magnetron sputtering. Based on the analysis of the I – V -characteristics in the region of forward and reverse biases, the relationship between the physical processes during heat treatment and the structural perfection of the transition area of the studied heterojunctions have been established.

中文翻译：

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基材对ZnO：Al / n -CdS / p -Cd 1-x Zn x Te异质结的界面性质的影响

研究了在高温（t = 900°C）p -Cd 1-x Zn x Te衬底上未经退火和退火的结构的I-V特性和CV特性。研究了基体材料p -Cd 1-x Zn x Te的本征点缺陷体系对ZnO：Al / n -CdS / p -Cd 1-x Zn x Te异质结的界面性能的影响。通过使用高频磁控溅射在晶体p -Cd 1-x Zn x Te上顺序沉积CdS和ZnO：Al薄膜来制造上述结构。基于对正向和反向偏置区域的IV特性的分析，建立了热处理过程中的物理过程与所研究异质结过渡区的结构完善之间的关系。