Plasma activated bonding is recognized as a promising wafer direct bonding method, due to its low-temperature process, low-cost in equipment, and environmental-friendly procedure. However, the etching process through high-energy species in plasma will inevitably damage the smooth surfaces, thus causing the defects on the bonding interfaces. In this paper, we study the effects of oxygen plasma activation with different directions on silicon and glass wafers surfaces as well as their roles in direct bonding process. An experimental methodology was designed by horizontally and vertically placed samples on stage holders, through which the effects of plasma activation direction could be thoroughly investigated. The surface characterizations show that the horizontally placed activated samples possessing smoother surface morphologies and more hydrophilic bonds. Thanks to the plasma activation at the horizontal placed position, the interfacial microstructures of the silicon/glass bondin...

中文翻译：

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低损伤直接键合的等离子体活化方向研究

等离子活化键合由于其低温工艺，设备成本低廉和环保工艺而被公认为是一种有前途的晶片直接键合方法。然而，通过等离子体中的高能物质进行的蚀刻过程将不可避免地损坏光滑表面，从而在键合界面上造成缺陷。在本文中，我们研究了不同方向的氧等离子体活化对硅和玻璃晶圆表面的影响，以及它们在直接键合过程中的作用。通过将样品水平和垂直放置在载物台支架上，设计了一种实验方法，通过它可以彻底研究等离子体激活方向的影响。表面特征表明，水平放置的活化样品具有更光滑的表面形态和更多的亲水键。由于在水平放置位置的等离子体活化，硅/玻璃键合的界面微观结构...