We present the results of micromagnetic simulations of controlled domain wall (DW) pinning in a multilayer ferromagnetic nanowire, consisting of Co layer with planar anisotropy and CoPt layer with perpendicular magnetic anisotropy. The CoPt layer contains a modified region with reduced anisotropy, which serves as a controlled gate for the pinning of DW moving in the Co layer. The peculiarities of the DW pinning/depinning processes are studied depending on the direction of magnetization in the modified CoPt region, as well as on the geometric and material parameters of the system. The possibility of application for logical computing is discussed.

中文翻译：

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具有不同磁各向异性的两层复合铁磁纳米线中畴壁的钉扎

我们展示了多层铁磁纳米线中受控畴壁 (DW) 钉扎的微磁模拟结果，该纳米线由具有平面各向异性的 Co 层和具有垂直磁各向异性的 CoPt 层组成。CoPt 层包含具有降低的各向异性的改性区域，该区域用作钉扎在 Co 层中移动的 DW 的受控栅极。根据修改后的 CoPt 区域中的磁化方向以及系统的几何和材料参数，研究了 DW 钉扎/脱钉过程的特性。讨论了应用逻辑计算的可能性。