Electrically-pumped AlGaN-based edge-emitting laser diodes with a buried tunnel junction (TJ) for sub-300 nm emission are designed in this paper. Hole injection is one of the major concerns for the design of ultraviolet (UV) lasers based on this material system. The use of a low-resistive TJ as an intracavity contact within the devices will offer an opportunity to replace highly resistive p-type AlGaN-based cladding and contact layers by their n-doped counterparts. This advanced polarization-engineered interband TJs will lead to improved hole injection and a significantly reduced threshold voltage. The thermal properties of the tunnel-injected devices are thoroughly studied theoretically. For the demonstration of continuous-wave operating lasers, possible improvements in terms of better thermal management of the device are also discussed.

中文翻译：

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隧道注入亚 300 nm AlGaN 激光二极管的理论分析


本文设计了基于电泵浦 AlGaN 的边缘发射激光二极管，具有埋入式隧道结 (TJ)，可实现 300 nm 以下发射。空穴注入是基于这种材料系统的紫外（UV）激光器设计的主要关注点之一。使用低电阻 TJ 作为器件内的腔内接触将提供用 n 掺杂对应物取代高电阻 p 型 AlGaN 基包覆层和接触层的机会。这种先进的偏振工程带间 TJ 将改善空穴注入并显着降低阈值电压。对隧道注入装置的热性能进行了深入的理论研究。为了演示连续波工作激光器，还讨论了在更好的设备热管理方面可能的改进。