The findings from the time-of-flight (TOF) experiment for strained silicon nanowires are reported in this article, in combination with numerical simulations demonstrating new physical features involved in the quasi-quantum regime. The drift velocity of valence holes is demonstrated to exceed greatly that of conduction electrons. These experimental data are accurately reproduced by our simulations, revealing a dramatic reduction in the hole’s effective mass as well as a significant extension of the mean-free time between two consecutive random scattering events due to combined effects of both quantum confinement and biaxial strain. Many-body theory is further introduced for calculating elastic-scattering rate of impurities with the inclusion of static screening under the random-phase approximation. Dark current, photo-current and photoluminescence spectra are all measured in our experiments, in addition to direct TOF experiment by employing a Ti-sapphire mode-locked femtosecond laser, and their data are fully analyzed and physically explained by using both simulations and many-body theory. Our observation that the Einstein’s relation does not hold true for 1-D transport under a strong electric field is supported by a quantum-statistical calculation. Our discovery with a very large hole mobility is expected to play a key role in establishing a much more straight-forward technical path towards high-performance CMOS and radio-frequency amplifiers than current ones.

中文翻译：

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具有极高空穴迁移率的同心应变硅纳米线的制备、表征和分析

本文报道了应变硅纳米线飞行时间 (TOF) 实验的结果，并结合数值模拟展示了准量子机制中涉及的新物理特征。证明价空穴的漂移速度大大超过传导电子的漂移速度。我们的模拟准确地再现了这些实验数据，揭示了由于量子限制和双轴应变的组合效应，孔的有效质量显着降低，并且两次连续随机散射事件之间的平均自由时间显着延长。进一步引入多体理论计算杂质的弹性散射率，包括随机相位近似下的静态筛选。暗电流，除了采用钛蓝宝石锁模飞秒激光器的直接TOF实验外，我们的实验均测量了光电流和光致发光光谱，并通过使用模拟和多体理论对它们的数据进行了全面分析和物理解释。我们观察到爱因斯坦的关系对于强电场下的一维输运不成立，这一点得到了量子统计计算的支持。我们的发现具有非常大的空穴迁移率，预计将在为高性能 CMOS 和射频放大器建立比当前更直接的技术路径方面发挥关键作用。并使用模拟和多体理论对他们的数据进行了全面分析和物理解释。我们观察到爱因斯坦的关系对于强电场下的一维输运不成立，这一点得到了量子统计计算的支持。我们的发现具有非常大的空穴迁移率，预计将在为高性能 CMOS 和射频放大器建立比当前更直接的技术路径方面发挥关键作用。并使用模拟和多体理论对他们的数据进行了全面分析和物理解释。我们观察到爱因斯坦的关系对于强电场下的一维输运不成立，这一点得到了量子统计计算的支持。我们的发现具有非常大的空穴迁移率，预计将在为高性能 CMOS 和射频放大器建立比当前更直接的技术路径方面发挥关键作用。