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Self-Powered Broadband Photodetector Based on Single-Walled Carbon Nanotube/GaAs Heterojunctions
ACS Sustainable Chemistry & Engineering ( IF 7.1 ) Pub Date : 2020-09-22 , DOI: 10.1021/acssuschemeng.0c04495 Tingting Huo 1 , Huan Yin 1 , Dayong Zhou 2 , Lijie Sun 2 , Tian Tian 1 , Hao Wei 1 , Nantao Hu 1 , Zhi Yang 1 , Yafei Zhang 1 , Yanjie Su 1
ACS Sustainable Chemistry & Engineering ( IF 7.1 ) Pub Date : 2020-09-22 , DOI: 10.1021/acssuschemeng.0c04495 Tingting Huo 1 , Huan Yin 1 , Dayong Zhou 2 , Lijie Sun 2 , Tian Tian 1 , Hao Wei 1 , Nantao Hu 1 , Zhi Yang 1 , Yafei Zhang 1 , Yanjie Su 1
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Van der Waals (vdW) heterojunctions between single-walled carbon nanotubes (SWCNTs) and GaAs are potential candidates for optoelectronic devices owing to their direct bandgap, high carrier mobility, diffusion-free atomically sharp interface, and flexible device structures. The existence of mixed-chirality SWCNTs suppresses the charge separation and transportation of photoexcited carriers at the interface. Herein, we demonstrate a self-powered broadband photodetector by combining n-type GaAs with a (6, 5)-enriched semiconducting SWCNT film. The experimental results show that the device exhibits a broadband photoelectric response spectrum from visible (405 nm) to near-infrared (1064 nm). Under 780 nm illumination, a high responsivity of 274 mA W–1 and detectivity of 7.6 × 1012 Jones can be achieved with a response/recovery time of 1.41/0.27 ms at zero bias. The photoelectric performance is mainly attributed to the enhanced separation efficiency of the photoexcited carriers due to the formation of vdW heterojunctions. Our findings open up the opportunities for highly sensitive self-powered photodetectors.
中文翻译：
基于单壁碳纳米管/ GaAs异质结的自供电宽带光电探测器
单壁碳纳米管（SWCNT）和砷化镓之间的范德华（vdW）异质结由于其直接的带隙，高载流子迁移率，无扩散的原子尖锐界面和灵活的器件结构而成为光电器件的潜在候选者。混合手性SWCNT的存在抑制了界面处光激发载流子的电荷分离和传输。在本文中，我们通过将n型GaAs与富含（6，5）的半导体SWCNT薄膜相结合，展示了一种自供电宽带光电探测器。实验结果表明，该器件具有从可见光（405 nm）到近红外光（1064 nm）的宽带光电响应光谱。在780 nm的光照下，具有274 mA W –1的高响应度和7.6×10 12的检测率零偏置时，响应/恢复时间为1.41 / 0.27 ms，可以实现Jones。光电性能主要归因于由于vdW异质结的形成，光激发载流子的分离效率提高。我们的发现为高度敏感的自供电光电探测器打开了机会。
更新日期：2020-10-21
中文翻译：
基于单壁碳纳米管/ GaAs异质结的自供电宽带光电探测器
单壁碳纳米管（SWCNT）和砷化镓之间的范德华（vdW）异质结由于其直接的带隙，高载流子迁移率，无扩散的原子尖锐界面和灵活的器件结构而成为光电器件的潜在候选者。混合手性SWCNT的存在抑制了界面处光激发载流子的电荷分离和传输。在本文中，我们通过将n型GaAs与富含（6，5）的半导体SWCNT薄膜相结合，展示了一种自供电宽带光电探测器。实验结果表明，该器件具有从可见光（405 nm）到近红外光（1064 nm）的宽带光电响应光谱。在780 nm的光照下，具有274 mA W –1的高响应度和7.6×10 12的检测率零偏置时，响应/恢复时间为1.41 / 0.27 ms，可以实现Jones。光电性能主要归因于由于vdW异质结的形成，光激发载流子的分离效率提高。我们的发现为高度敏感的自供电光电探测器打开了机会。
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