GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels.

GaN 和异质结构在凝聚态科学和电子设备应用中具有吸引力。我们测量低温下 GaN/AlGaN 场效应晶体管 (FET) 中的电子传输。我们观察到在二维电子气 (2DEG) 耗尽附近的传导通道中量子点的形成。多个量子点在FET传导沟道中由杂质引起的无序电势中形成。我们还测量了传输特性对栅极绝缘体的依赖性。这些结果可用于开发利用 GaN/AlGaN 异质结构的量子点器件以及评估 GaN/AlGaN FET 通道中的杂质。