Strain Engineering in Halide Perovskites,ACS Materials Letters

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Strain Engineering in Halide Perovskites
ACS Materials Letters ( IF 9.6 ) Pub Date : 2020-09-21 , DOI: 10.1021/acsmaterialslett.0c00308
Erin G. Moloney ₁ , Vishal Yeddu ₁ , Makhsud I. Saidaminov _{1,

2,

3}

Affiliation

Despite the well-known implications in the field of III–V semiconductors, lattice strain in halide perovskite materials has been largely overlooked until recently. Here, we review the effect of lattice strain on the structural, chemical, and optoelectronic properties of metal halide perovskites to understand how strain engineering can be applied to improve device performance. We start by arguing that perovskites, like any other semiconducting material, are not immune to the negative effects of mismanaged strain. We analyze the origin—and detrimental consequences—of lattice strain in perovskite crystals and heterostructures. We then discuss how strain management addresses the polymorphism issue of some of the most desirable perovskite compositions, and how it prevents the harmful migration of ions in perovskites. We conclude by offering our perspective on the unexplored potential of strain engineering and argue that its controlled management can lead to untapped territories, including perovskite large-area single-crystalline thin films and electrically pumped lasers.

中文翻译：

卤化物钙钛矿中的应变工程

尽管在III-V半导体领域有众所周知的影响，但直到最近，卤化物钙钛矿材料中的晶格应变仍被广泛忽略。在这里，我们回顾了晶格应变对金属卤化物钙钛矿结构，化学和光电性能的影响，以了解如何应用应变工程技术来改善器件性能。我们从争论开始，认为钙钛矿与任何其他半导体材料一样，都无法避免应变不当带来的负面影响。我们分析了钙钛矿晶体和异质结构中晶格应变的起源和有害后果。然后，我们讨论了应变管理如何解决某些最理想的钙钛矿成分的多态性问题，以及它如何防止钙钛矿中离子的有害迁移。

更新日期：2020-11-02

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