The depth profiles of aluminum (Al) ion implantation on 4H-SiC epilayers with implantation energy range from 90 keV to above 1 MeV have been studied. The SIMS profiles show that the channeling effect is significantly reduced as the energy increases. This is attributed to the dechanneling effects due to the introduction of interstitial type defects created by preceding implanting ions under high-implantion energy and high-dose level conditions. We compare experimental data with simulation results based on SRIM^TM program and Sentaurus^TM Monte Carlo (MC) model. The SRIM simulation shows good agreement with the experimental profiles around the projected range, but could not reproduce the channeling tails of the profiles. The calibrated sentaurus MC model can show good agreement with the experimental profiles of projected range and channeling. The effect of tilt angle and implantation temperature on the channeling in the calibrated sentaurus MC model is also studied.

研究了注入能量范围从90 keV到1 MeV以上的4H-SiC外延层上铝（Al）离子注入的深度分布。SIMS曲线表明，随着能量的增加，沟道效应显着降低。这归因于由于在高注入能量和高剂量水平条件下由先前注入离子而产生的间隙型缺陷所引起的去通道效应。我们将实验数据与基于SRIM ^TM程序和Sentaurus ^TM的仿真结果进行比较蒙特卡洛（MC）模型。SRIM仿真显示在投影范围内与实验轮廓吻合良好，但无法再现轮廓的通道尾部。标定的金牛座MC模型可以与预期射程和航道的实验剖面显示出良好的一致性。还研究了倾斜角和植入温度对校准后的趾骨MC模型中通道的影响。