Abstract ZnTe is a potential material for device fabrication because of the suitable optoelectronic properties. In this work, a nanocrystalline binary semiconductor zinc telluride (ZnTe) was developed in non-aqueous medium through an electrochemical deposition process. We report the structural and optical properties of developed ZnTe films deposited on nickel and glass substrate at various temperatures (350–500 °C). The solid state and optical properties of developed film was characterized by XRD, SEM, EDS, UV Vis spectroscopy and Photoluminescence spectroscopy. XRD analysis indicates the polycrystalline deposits in all the cases. The sharpness of the peak increases due to annealing of the film and average crystalline size increases. SEM photograph indicate that grains are uniform and densely distributed over the surface. The main effect of annealing temperature was helpful to improve crystalline structure, whereas the bandgap of semiconductor was reduced due to large density of dislocations. This study is vital for the optimization of the annealing temperature for growth of good-quality ZnTe films, which are necessary for device fabrication and applications.

中文翻译：

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电沉积技术开发的纳米晶ZnTe薄膜的退火温度相关结构和光学性能

摘要 ZnTe 是一种潜在的器件制造材料，因为它具有合适的光电特性。在这项工作中，通过电化学沉积过程在非水介质中开发了纳米晶二元半导体碲化锌 (ZnTe)。我们报告了在不同温度（350-500°C）下沉积在镍和玻璃基板上的已开发的 ZnTe 薄膜的结构和光学特性。通过XRD、SEM、EDS、紫外可见光谱和光致发光光谱对显影后薄膜的固态和光学性质进行了表征。XRD 分析表明在所有情况下都是多晶沉积物。由于薄膜的退火和平均晶体尺寸的增加，峰的锐度增加。SEM照片表明晶粒均匀且密集地分布在表面上。退火温度的主要影响有利于改善晶体结构，而半导体的带隙由于位错密度大而减小。这项研究对于优化生长高质量 ZnTe 薄膜的退火温度至关重要，这是器件制造和应用所必需的。