Abstract The combination of several two-dimensional materials opens the door for the creation of cooperative nanodevices with functionalities that complement to each other and even compensate the weaknesses of the individual components. Two-dimensional indium selenide (InSe) shows one of the largest tunability bandgap found in two-dimensional materials with application in optoelectronics. However, the intrinsic out-of-plane luminescent dipolar nature limits its implementation in devices operating in vertical configuration. All-inorganic CsPbX3 (X = Br, I) cubic nanoparticles offer high absorption and emission quantum yields and great integrability with two-dimensional materials. Combining these two compounds, it is found that InSe-perovskite nano-heterostructures enhances the photoluminescence of the InSe side of the device, as compared to the bare InSe nanosheet, due to the multi-oriented down-shift light conversion mediated by the perovskite-nanocrystals. Similar nanostructures have been prepared by using Molybdenum Selenide (MoSe2), but a reduction of its photoluminescence is observed in this case due to its well-known in-plane dipole orientation.

中文翻译：

---

用 CsPbX3 (X=I, Br) 钙钛矿纳米晶体装饰的 InSe 纳米片器件的光学响应增强

摘要 几种二维材料的组合为创建具有互补功能甚至弥补单个组件弱点的协作纳米器件打开了大门。二维硒化铟 (InSe) 是二维材料中发现的最大可调带隙之一，可应用于光电子学。然而，固有的面外发光偶极性质限制了其在垂直配置操作的设备中的实现。全无机 CsPbX3 (X = Br, I) 立方纳米粒子提供高吸收和发射量子产率以及与二维材料的良好集成性。结合这两种化合物，发现 InSe-钙钛矿纳米异质结构增强了器件 InSe 侧的光致发光，与裸 InSe 纳米片相比，由于钙钛矿-纳米晶体介导的多方向下移光转换。已经使用硒化钼 (MoSe2) 制备了类似的纳米结构，但由于其众所周知的面内偶极子取向，在这种情况下观察到其光致发光的减少。