Abstract Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of growth conditions on structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for the PtSe2 layers grown at elevated temperatures (600 °C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. The charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s.

中文翻译：

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通过单区硒化生长的高载流子迁移率外延排列的 PtSe2 薄膜

摘要 少层 PtSe2 薄膜是高速电子学、自旋电子学和光电探测器应用的有希望的候选者。然而，大面积高结晶薄膜的可重复制造仍然是一个挑战。在这里，我们报告了使用预溅射铂层的单区硒化制造外延排列的 PtSe2 薄膜。我们研究了生长条件对由不同初始厚度的 Pt 层制备的薄膜的结构和电学性能的影响。在高温 (600 °C) 下生长的 PtSe2 层获得了最好的结果。这些薄膜表现出类似于外延生长的长程平面内排序的特征。通过霍尔效应测量确定的电荷载流子迁移率高达 24 cm2/Vs