In this paper, a new U-shaped channel tunneling-based field-effect transistor (UTFET) with auxiliary gate above drain is proposed. The ambipolar current in the proposed is investigated, in which simulation results show that ambipolar current takes place, due to drain-to-drain tunneling similar to gate-induced drain leakage in conventional MOSFETs. By drain depletion in auxiliary gate-based UTFET, electric field is reduced in ambipolar tunneling region, which causes tunneling barrier width to increase and the energy window of tunneling (ΔΦ) to decrease. As a result, two decades of reduction in the ambipolar current is achieved and ambipolar subthreshold swing (SSamb) is degraded by 24.8% in comparison with similar structure without auxiliary gate.

中文翻译：

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通过辅助栅极抑制 UTFET 中的双极电流

在本文中，提出了一种新型 U 型沟道隧道场效应晶体管 (UTFET)，其辅助栅极位于漏极上方。研究了所提出的双极电流，其中模拟结果表明双极电流发生，这是由于类似于传统 MOSFET 中的栅极感应漏极泄漏的漏极到漏极隧道。通过基于辅助栅极的 UTFET 中的漏极耗尽，双极隧穿区的电场减小，导致隧穿势垒宽度增加，隧穿能量窗口 (ΔΦ) 减小。结果，与没有辅助栅极的类似结构相比，双极电流降低了 20 年，双极亚阈值摆幅 (SSamb) 降低了 24.8%。