Nanometre size semiconductors have been a topic of great interest. Porous silicon surfaces have been fabricated by photoelectrochemical etching for n-type silicon wafers. The objective of this paper focuses on the investigation of the effecting of deposited p-Ga/n-PSi on the performance of silicon solar cells. Gallium thin layer (400 nm) doped n-type porous silicon has been Determined by photoluminescence spectroscopy. Ga doping process was carried out by a physical vapor deposition technique and has subsequently been annealed at 1100 °C for 3 h. The surface morphology resulting from this process was observed by scanning electron microscopy. The measured spectra illustrate that the luminescence peak of PSi-doped Ga was shifted strongly to a shorter wavelength. One luminescence band appears at the peak of about ~ 612 nm for PSi/c-Si; while the photoluminescence spectrum of Ga/PSi/c-Si is produced by two light bands with peaks about ~ 435 and ~ 830 nm. The fabricated solar cell showed good photovoltaic properties were the conversion efficiency increased from (12.25 to 14.8%) and the filling factor increased from (79.47–82.33) in comparison with other solar cells.

中文翻译：

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改进的 PSi/c-Si 和 Ga/PSi/c-Si 纳米结构依赖的太阳能电池效率

纳米尺寸的半导体一直是一个非常有趣的话题。多孔硅表面已经通过用于 n 型硅晶片的光电化学蚀刻制造。本文的目的集中在研究沉积的 p-Ga/n-PSi 对硅太阳能电池性能的影响。镓薄层 (400 nm) 掺杂的 n 型多孔硅已通过光致发光光谱法测定。Ga 掺杂工艺是通过物理气相沉积技术进行的，随后在 1100°C 下退火 3 小时。通过扫描电子显微镜观察由该过程产生的表面形态。测量的光谱表明，PSi 掺杂的 Ga 的发光峰强烈地向更短的波长移动。对于PSi/c-Si，一个发光带出现在约~612 nm 的峰值处；而 Ga/PSi/c-Si 的光致发光光谱由两个光带产生，峰值约为 435 纳米和 830 纳米。与其他太阳能电池相比，制造的太阳能电池显示出良好的光伏性能，转换效率从（12.25% 到 14.8%）增加，填充因子从（79.47-82.33）增加。