This paper reports the performance enhancement benefits in diamond turning of the silicon wafer by incorporation of the surface defect machining (SDM) method. The hybrid micromachining methods usually require additional hardware to leverage the added advantage of hybrid technologies such as laser heating, cryogenic cooling, electric pulse or ultrasonic elliptical vibration. The SDM method tested in this paper does not require any such additional baggage and is easy to implement in a sequential micro-machining mode. This paper made use of Raman spectroscopy data, average surface roughness data and imaging data of the cutting chips of silicon for drawing a comparison between conventional single-point diamond turning (SPDT) and SDM while incorporating surface defects in the (i) circumferential and (ii) radial directions. Complementary 3D finite element analysis (FEA) was performed to analyse the cutting forces and the evolution of residual stress on the machined wafer. It was found that the surface defects generated in the circumferential direction with an interspacing of 1 mm revealed the lowest average surface roughness (Ra) of 3.2 nm as opposed to 8 nm Ra obtained through conventional SPDT using the same cutting parameters. The observation of the Raman spectroscopy performed on the cutting chips showed remnants of phase transformation during the micromachining process in all cases. FEA was used to extract quantifiable information about the residual stress as well as the sub-surface integrity and it was discovered that the grooves made in the circumferential direction gave the best machining performance. The information being reported here is expected to provide an avalanche of opportunities in the SPDT area for low-cost machining solution for a range of other nominal hard, brittle materials such as SiC, ZnSe and GaAs as well as hard steels.

本文报道了通过结合表面缺陷加工（SDM）方法在硅晶片的金刚石车削中提高性能的好处。混合微加工方法通常需要其他硬件来利用混合技术的附加优势，例如激光加热，低温冷却，电脉冲或超声椭圆振动。本文测试的SDM方法不需要任何此类额外的行李，并且易于在顺序微加工模式下实施。本文利用拉曼光谱数据，平均表面粗糙度数据和硅切割片的成像数据来对常规单点金刚石车削（SPDT）和SDM进行比较，同时在（i）圆周和（ ii）径向。进行了补充3D有限元分析（FEA），以分析切削力和机加工晶圆上残余应力的演变。发现在周向上以1mm的间隔产生的表面缺陷显示出最低的平均表面粗糙度（Ra）为3.2nm，与通过使用相同切削参数的常规SPDT获得的8nm Ra相反。在所有情况下，对切屑的拉曼光谱观察表明，在微加工过程中残留有相变。FEA用于提取有关残余应力以及表面下完整性的可量化信息，并且发现沿圆周方向制作的凹槽具有最佳的加工性能。