A novel photoactive semiconductor (named as IDTOT-4F) with an A-π-D-π-A-type configuration is synthesized. It contains an electron-donating fused ring (D) as the core flanked with two π-spacers and is end-capped with two electron-withdrawing units (A). The intramolecular charge transfer effect endows IDTOT-4F with strong and broad light absorption and a relatively narrow band gap (1.46 eV). Thin-film optoelectrical devices based on IDTOT-4F exhibit both n-type and p-type switching behaviors. Besides, the p-channel device shows significantly photoresponsive performance with the maximum P (photo/dark current ratio), R (photoresponsivity), and D* (detectivity) values of around 60, 0.07 AW⁻¹, and 2.5 × 10¹⁰ Jones, respectively. Further, IDTOT-4F based optoelectrical devices exhibit good optical memory characteristics with a time constant τ₁ of 4.6 h, indicating its applicability to nonvolatile optical memory devices. The results provide new insights into the photoresponsive behavior of fused-ring semiconductors and pave the way for the design of nonvolatile optical memory devices.

合成了具有A-π-D-π-A型结构的新型光敏半导体（称为IDTOT-4F）。它包含一个供电子稠环（D），其侧翼是两个π间隔子，并被两个吸电子单元（A）封端。分子内的电荷转移效应使IDTOT-4F具有强而宽的光吸收和相对窄的带隙（1.46 eV）。基于IDTOT-4F的薄膜光电器件同时具备ñ类型和 p类型的切换行为。此外，p通道设备显示出显着的光响应性能 P （光/暗电流比）， [R （光响应性），和 D *（探测）值分别约为60、0.07 AW ^-1和2.5×10 ¹⁰  Jones。此外，基于IDTOT-4F的光电器件具有良好的光学存储特性和时间常数τ4.6小时的₁，表明它适用于非易失性光学存储设备。结果为熔环半导体的光响应行为提供了新的见识，并为非易失性光学存储设备的设计铺平了道路。