Abstract

Atomic layer deposition (ALD) has emerged as the technique of choice in the microelectronics industry, owing to its self-limiting nature, that allows conformal film deposition in highly confined spaces. However, while the ALD of metal oxide has developed dramatically over the past decade, ALD of pure metal, particularly the transition metals has been developing at a very slow pace. This article reviews the latest development in the ALD of pure transition metals and alloys, for electronic and catalytic applications. In particular, the article analyzes how different factors, such as the substrate properties, deposition conditions, precursor and co-reactant properties, influence the deposition of the metal films and nanostructures, as well as the emerging applications of the ALD derived transition metal nanostructures. The challenges facing the field are highlighted, and suggestions are made for future research directions.

摘要

原子层沉积 (ALD) 已成为微电子行业的首选技术，因为它具有自限性，可在高度受限的空间中进行保形薄膜沉积。然而，虽然金属氧化物的 ALD 在过去十年中发展迅速，但纯金属，特别是过渡金属的 ALD 发展速度非常缓慢。本文回顾了用于电子和催化应用的纯过渡金属和合金 ALD 的最新进展。特别是，文章分析了不同的因素，如基材性质、沉积条件、前体和共反应物性质，如何影响金属薄膜和纳米结构的沉积，以及 ALD 衍生的过渡金属纳米结构的新兴应用。