Spin Seebeck effect has been mostly explored in bulk magnetic materials, but the efficiency is not large enough for device application. Recently, we have found that the 2D ferromagnetic CrPbTe3 layer has rather a high Curie temperature of 110 K. Thus, we have investigated the spin dependent Seebeck effect using the Boltzmann transport approach. We have found the largest carrier mobility and relaxation time in the minority spin electron carrier system due to the spin dependent effective mass and deformation potential constant. The onset energy of the electrical conductivity shows spin and carrier type dependency. Thus, both effective spin and effective charge Seebeck coefficients are originated from the majority spin carrier in the hole doped system whereas the minority spin carrier controls the effective spin and effective charge Seebeck coefficient in the electron doped system. We have obtained the maximum spin Seebeck coefficient of 1320 μV/K at 50 K. This value is suppressed at 100 K, but we still find a large spin Seebeck coefficient of 715 μV/K.

自旋塞贝克效应已在块状磁性材料中得到了广泛的探索，但是效率不足以用于器件应用。最近，我们发现二维铁磁CrPbTe3层的居里温度相当高，为110K。因此，我们使用玻尔兹曼输运方法研究了自旋依赖性塞贝克效应。由于自旋相关的有效质量和形变势常数，我们发现少数自旋电子载流子系统具有最大的载流子迁移率和弛豫时间。电导率的开始能量显示出自旋和载流子类型的依赖性。从而，有效自旋和有效电荷塞贝克系数都源自空穴掺杂系统中的多数自旋载流子，而少数自旋载流子控制电子掺杂系统中的有效自旋和有效电荷塞贝克系数。我们在50 K时获得的最大自旋Seebeck系数为1320μV/ K。在100 K时，该值受到抑制，但是我们仍然发现自旋Seebeck系数为715μV/ K。