Realization of oxide/oxide semiconductor hetrostructures based high performance electronic/optoelectronic/magneto-optical devices warrants in-depth understanding of energy band alignment at their interface. Herein, we report energy band alignment in pulsed laser ablated Cr₂O₃/Ti_0.02Cr_1.98O₃ bilayer film from the knowledge of core level energies and valence band maxima positions in the corresponding Cr₂O₃ and Ti_0.02Cr_1.98O₃ single layer films and their respective shifts in Cr₂O₃/Ti_0.02Cr_1.98O₃ bilayer film. A type II (staggered) band alignment was identified, with the valence band offset and conduction band offset equals to 1.40 eV and 1.13 eV, respectively. This investigation will provide further insights into the fundamental properties of Cr₂O₃/Ti_0.02Cr_1.98O₃ heterojunction, which can be effectively utilized for the design, modeling and analysis of optoelectronic/magneto-optical devices.

基于氧化物/氧化物半导体异质结构的高性能电子/光电/磁光器件的实现，需要深入了解其界面处的能带对准。本文中，我们根据相应的Cr ₂ O ₃和Ti _0.02 Cr _1.98 O _3中的核能级和价带最大值位置的知识，报告了脉冲激光烧蚀Cr ₂ O ₃ / Ti _0.02 Cr _1.98 O ₃双层薄膜中的能带取向。单层膜及其在Cr ₂ O ₃ / Ti _0.02 Cr _1.98中的位移O ₃双层膜。确定了II型（交错）能带对准，价带偏移和导带偏移分别等于1.40 eV和1.13 eV。这项研究将为Cr ₂ O ₃ / Ti _0.02 Cr _1.98 O ₃异质结的基本性质提供进一步的见解，该异质结可以有效地用于光电子/磁光器件的设计，建模和分析。