Abstract Temperature variation on board can have a significant impact on electronic circuit parameters. In this paper, we investigate and model how both irradiated NPN and PNP-Bipolar Junction Transistors (BJTs) at room temperature respond electrically to temperature variation. A temperature-dependent analytical model for total-ionizing-dose-induced excess base current in BJTs is proposed. Our model captures base current dependence on temperature on irradiated parts. To do so, the devices under test are irradiated at room temperature with all terminals grounded. After irradiation, base currents are obtained, and the concentrations of oxide defects (i.e., oxide trapped charge and interface traps) created during irradiation are calculated. At the end, results from our analytical model and experimental data are compared to SPICE simulations. Both base current and defect densities resulting from room temperature irradiations are used as inputs to SPICE simulations and the analytical model. Experimental data obtained from measurements at both low and high temperatures on parts irradiated at room temperature are shown to compare well to the simulation results and analytical model over a range of temperatures. The modeling work shows that SPICE simulations can support qualification for commercial-off-the-shelf (COTS) linear bipolar components with temperature for space applications.

中文翻译：

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低剂量率辐照后双极结型晶体管电流-电压特性的温度依赖性

摘要 板上温度变化会对电子电路参数产生重大影响。在本文中，我们研究并模拟了室温下受辐射的 NPN 和 PNP-双极结晶体管 (BJT) 如何对温度变化做出电气响应。提出了 BJT 中总电离剂量引起的过量基极电流的温度相关分析模型。我们的模型捕获了受辐照部件上的基本电流对温度的依赖性。为此，在室温下对被测设备进行辐照，所有端子均接地。辐照后，获得基极电流，并计算辐照期间产生的氧化物缺陷（即，氧化物俘获电荷和界面陷阱）的浓度。最后，将我们的分析模型和实验数据的结果与 SPICE 模拟进行比较。由室温辐射产生的基极电流和缺陷密度都用作 SPICE 模拟和分析模型的输入。从在室温下辐照的部件在低温和高温下测量获得的实验数据显示，与模拟结果和分析模型在一定温度范围内进行了很好的比较。建模工作表明，SPICE 仿真可以支持具有空间应用温度的商用现货 (COTS) 线性双极元件的认证。从在室温下辐照的部件在低温和高温下测量获得的实验数据显示，与模拟结果和分析模型在一定温度范围内进行了很好的比较。建模工作表明，SPICE 仿真可以支持具有空间应用温度的商用现货 (COTS) 线性双极元件的认证。从在室温下辐照的部件在低温和高温下测量获得的实验数据显示，与模拟结果和分析模型在一定温度范围内进行了很好的比较。建模工作表明，SPICE 仿真可以支持具有空间应用温度的商用现货 (COTS) 线性双极元件的认证。