Abstract A new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) in GaN High Electron Mobility Transistor (HEMT) device at room temperature is presented. In present study, experimental demonstration is provided which clearly discriminate ISBT from any other transitions induced by deep level traps, defects, etc. in 100 nm GaN HEMT device at room temperature. The strong interaction of light with two-dimensional electron gas (2DEG) inside asymmetrical triangular quantum well of GaN HEMT is investigated. The resultant ISBT of the carriers can be explained through pinning of the fermi level inside the quantum well by applying an electrical field along growth direction through gate. Presently intersubband (ISB) based devices are operated at cryogenic temperature to minimize the thermal lattice vibration. The inherent advantage of conduction band tuning through external bias in HEMT structure as demonstrated in this works can leads to room temperature device operation feasibility.

中文翻译：

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用于太赫兹应用的 GaN HEMT 中子带间跃迁的室温光子诱导电调谐

摘要 提出了一种在室温下对 GaN 高电子迁移率晶体管 (HEMT) 器件中的子带间跃迁 (ISBT) 进行电调谐的新型通用机制。在目前的研究中，提供了实验演示，可在室温下将 ISBT 与深能级陷阱、缺陷等在 100 nm GaN HEMT 器件中引起的任何其他跃迁区分开来。研究了光与 GaN HEMT 的不对称三角量子阱内的二维电子气 (2DEG) 的强相互作用。载流子的最终 ISBT 可以通过通过栅极沿生长方向施加电场来钉扎量子阱内的费米能级来解释。目前，基于子带间 (ISB) 的设备在低温下运行以最小化热晶格振动。