Abstract

Due to the special shape of cutting or grinding tools used nowadays, hot filament (HF)-substrate distance is usually unavoidable during the process of diamond deposition by hot filament chemical vapor deposition (HFCVD), which will lead to difficult deposition process for nanocrystalline diamond (NCD). Based on this problem, the coupling effects of different CH₄/H₂/Ar gas ratios and HF-substrate distances on the growth of NCD films are systematically studied. SEM and Raman are used to analyze the surface morphology and sp³/sp² contents of the diamond films deposited on different areas of each specimen. The results indicate that the proper increase of HF-substrate distance and concentration of CH₄ or Ar encourage the growth of NCD. Under the condition of lower concentration of CH₄ or Ar, NCD with uniform grain size can also be realized at a certain range of HF-substrate distance. A graph that shows the growth conditions of MCD, MCD/NCD and NCD is creatively presented by summarizing the deposition parameters and experimental results. This work provides a path to coat NCD onto the special-shaped cutting or grinding tools by HFCVD.

中文翻译：

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CH 4 / H 2 / Ar气比和热丝-基材距离对纳米晶金刚石生长的耦合效应

摘要

由于当今使用的切削或磨削工具的特殊形状，在通过热丝化学气相沉积（HFCVD）进行金刚石沉积的过程中，通常无法避免出现热丝（HF）-基材距离，这将导致纳米晶金刚石的沉积工艺困难（NCD）。基于这个问题，系统地研究了不同的CH ₄ / H ₂ / Ar气比和HF-衬底距离对NCD薄膜生长的耦合作用。SEM和拉曼光谱仪用于分析沉积在每个样品不同区域上的金刚石膜的表面形态和sp ³ / sp ²含量。结果表明，HF-底物距离和CH浓度的适当增加₄或Ar鼓励NCD的生长。在CH ₄或Ar浓度较低的条件下，在一定的HF衬底距离范围内也可以实现晶粒尺寸均匀的NCD。通过总结沉积参数和实验结果，创造性地给出了显示MCD，MCD / NCD和NCD的生长条件的图表。这项工作提供了一种通过HFCVD将NCD涂覆到异形切割或磨削工具上的途径。