ABSTRACT Hard switching of semiconductors is the main source of conducted electromagnetic emissions (EME) in pulse-width modulation (PWM) driven power inverters. The requirements on the electromagnetic compatibility grow with the increasing number of installed electric motor drives and inductive power converters. An accurate prediction of the conducted EME requires a model which considers the switching transition of the power semiconductors and the parasitic elements. This typically leads to complex SPICE models, which are hardly suitable for fast dynamic simulations and model-based controller design. This paper presents a compact mathematical model of a low voltage half-bridge inverter, which is based on large-signal models for the individual components and allows for the fast simulation of the conducted EME and switching losses. The high accuracy of the proposed mathematical model is demonstrated by measurement results. In particular, it is shown that the model is able to accurately predict the conducted electromagnetic emissions up to 100 MHz.

中文翻译：

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用于快速模拟开关感应电磁辐射的功率金属氧化物半导体场效应晶体管半桥的动态模型

摘要 半导体的硬开关是脉宽调制 (PWM) 驱动的功率逆变器中传导电磁辐射 (EME) 的主要来源。随着安装的电动机驱动器和感应功率转换器数量的增加，对电磁兼容性的要求也越来越高。传导 EME 的准确预测需要一个模型，该模型考虑了功率半导体和寄生元件的开关转换。这通常会导致复杂的 SPICE 模型，这些模型很难适用于快速动态仿真和基于模型的控制器设计。本文提出了一种低压半桥逆变器的紧凑数学模型，该模型基于单个组件的大信号模型，可以快速模拟传导 EME 和开关损耗。测量结果证明了所提出的数学模型的高精度。特别是，它表明该模型能够准确预测高达 100 MHz 的传导电磁辐射。