Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III‐V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product R_ON·A of their on‐resistance R_ON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on‐resistance R_ON·A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of R_ON·A for HSJ devices can be lower than that of Si‐insulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN‐based HSJ devices but also GaAs‐based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures.

中文翻译：

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降低基于III-V半导体的1 kV级横向超结功率器件的导通电阻的可能性

理论上分析了基于GaN和GaAs等III-V半导体的横向异质超结（HSJ）功率器件的电位，以阐明导_通电阻R _ON的乘积R _ON · A与器件面积A的关系。击穿电压。通过关注击穿电压约为1 kV的功率器件，我们阐明了通过选择器件的结构和材料可以将各种器件的比导通电阻R _ON · A降低到哪个水平。已经发现R _ON · A的下限用于HSJ器件的功率可以低于硅绝缘栅双极型晶体管的功率，也可以低于基于SiC和/或GaN的垂直功率FET的功率。我们特别注意到，由于这些异质结结构的高电子迁移率特性，不仅基于GaN的HSJ器件而且基于GaAs的HSJ器件都具有出色的潜力。