Pulsed power generator using semiconductor switches have been developed. We have developed switching module using discrete type Silicon Carbide (SiC) Device for pulsed power circuit. We compare the switching module using SiC‐MOSFETs with conventional module using IGBTs. Both of switching devices the switching loss increased when the voltage get higher. The switching module using SiC‐MOSFETs can input higher voltage and has less switching loss in same input voltage. Also, we have investigate the switching loss depend on di/dt at switching. The permissible di/dt of SiC‐MOSFETs was higher than IGBTs. However, there is a limit to the value of permissible di/dt. The loss in this module is reduced by applying magnetic assist. The advantage of SiC‐MOSFET was confirmed in switching for pulsed power.

中文翻译：

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脉冲功率开关电路用SiC器件的研究

已经开发出使用半导体开关的脉冲式发电机。我们已经开发了使用离散型碳化硅（SiC）器件用于脉冲功率电路的开关模块。我们将使用SiC-MOSFET的开关模块与使用IGBT的常规模块进行了比较。当电压升高时，两个开关装置的开关损耗都增加。使用SiC-MOSFET的开关模块可以输入更高的电压，并且在相同的输入电压下具有更低的开关损耗。另外，我们研究了开关时的开关损耗取决于di / dt。SiC-MOSFET的允许di / dt高于IGBT。但是，允许的di / dt值有限制。通过施加磁性辅助可以减少此模块中的损耗。SiC-MOSFET的优势在脉冲功率切换中得到了证实。