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Fast Power Semiconductors Switching Current Measurement by Current Surface Probe
EPE Journal ( IF 0.5 ) Pub Date : 2015-10-01 , DOI: 10.1080/0939-8368.2015.11882295
Ke Li 1 , Arnaud Videt 1 , Nadir Idir 1
Affiliation  

With the advantage of high bandwidth and small insertion impedance, a current surface probe (CSP) used to measure switching current waveforms is presented in this paper. Its transfer impedance is characterized and validated by measuring an IGBT switching current that is compared with those obtained with a current probe (CP), a current shunt (CS) and a Hall effect current probe (HECP). Furthermore, by comparing with a CS to measure a GaN-HEMT switching current, it is shown that CSP is able to measure a switching current of a few nanoseconds, while it brings no influence on transistor voltage waveform measurement. The obtained results show that, the use of CSP brings little parasitic inductances in the measurement circuit and it does not bring the connection of the ground to the power converter, which is the case for the CS.

中文翻译:

电流表面探针快速功率半导体开关电流测量

本文提出了一种用于测量开关电流波形的电流表面探头(CSP),具有高带宽和小插入阻抗的优点。通过测量 IGBT 开关电流与使用电流探头 (CP)、分流器 (CS) 和霍尔效应电流探头 (HECP) 获得的电流进行比较来表征和验证其转移阻抗。此外,通过与CS测量GaN-HEMT开关电流的比较,表明CSP能够测量几纳秒的开关电流,同时对晶体管电压波形测量没有影响。得到的结果表明,CSP的使用在测量电路中带来的寄生电感很小,并且不会带来地与电源转换器的连接,这正是CS的情况。
更新日期:2015-10-01
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