Abstract In this paper, we present current-voltage characteristics of vertical and pseudo-vertical Diamond Schottky diodes operating up to 473 K. The functionality rate is greater than 75% for each samples. For vertical diodes, current density at 473 K reaches 488 A/cm², while it is greater than 1000 A/cm² for pseudo-vertical diodes. Under reverse bias, the leakage current is less than 10−7 A/cm² at 50 V for all functional diodes. However, the high barrier height and high non-ideality factor observed are probably caused by high charges at the Diamond/Schottky contact interface. This article emphasizes the high reproducibility of the characteristics and the functionality rate at 473 K.

中文翻译：

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金刚石肖特基二极管在 473 K 下工作

摘要 在本文中，我们介绍了工作在高达 473 K 的垂直和准垂直金刚石肖特基二极管的电流-电压特性。每个样品的功能率大于 75%。对于垂直二极管，473 K 时的电流密度达到 488 A/cm²，而伪垂直二极管则大于 1000 A/cm²。在反向偏置下，所有功能二极管在 50 V 时的漏电流小于 10−7 A/cm²。然而，观察到的高势垒高度和高非理想因子可能是由金刚石/肖特基接触界面处的高电荷引起的。这篇文章强调了在 473 K 下特性和官能度的高重现性。