In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO2/Ge-HfO2/HfO2 three-layer structure. This kind of transistor has a switching ratio of 103 between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene. The transistor acts as a three-terminal memristor, termed a memtransistor, with applications in neuromorphic computation.

中文翻译：

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晶圆级石墨烯铁电 hfo2/ge-hfo2/hfo2 晶体管充当三端忆阻器

在本文中，我们报告了一组关于在铁电 HfO2/Ge-HfO2/HfO2 三层结构上转移石墨烯单层通道的场效应晶体管的晶圆级实验。由于铁电结构引起的石墨烯带隙，这种晶体管在开和关状态之间具有 103 的开关比。顶栅和背栅都有效地控制了石墨烯中载流子的电荷流动。晶体管充当三端忆阻器，称为忆阻器，可用于神经形态计算。