Memory structures can be found in most electronic devices ranging from field programmable gate arrays to smart devices. There is an increasing demand for these devices to be energy efficient, small, fast and have high density for storage. Memory devices such as the static random access memory (SRAM) are widely used in many electronic devices, however SRAMs have a volatile memory architecture. A memristor is a unique electronic component with binary memory capabilities that are non-volatile which could replace the conventional memory cell architectures. This paper proposes the use of memristors in a quaternary 2-bit multileveled memory cell as a non-volatile look-up table (MNVLUT). The MNVLUT uses a dynamic ground with two transmission gates one memristor architecture with Schmitt triggers for the read and write operations. The proposed MNVLUT achieves lower energy consumption and writing time when compared to other existing memory architectures.

中文翻译：

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使用两个传输门和一个忆阻器存储单元的多级忆阻非易失性查询表

从现场可编程门阵列到智能设备，大多数电子设备中都可以找到存储结构。这些设备越来越需要节能，小巧，快速并且具有高存储密度。诸如静态随机存取存储器（SRAM）之类的存储设备已在许多电子设备中广泛使用，但是SRAM具有易失性存储架构。忆阻器是具有非易失性二进制存储器功能的独特电子组件，可以替代传统的存储器单元体系结构。本文提出在四元2位多级存储单元中使用忆阻器作为非易失性查找表（MNVLUT）。MNVLUT使用具有两个传输门的动态接地和一个带有施密特触发器的忆阻器架构进行读取和写入操作。