An improvement of Ni/Au/p + -GaN p-electrode for AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength of 280 nm is proposed for both p-side-up and flip-chip structures. An interdigitated multi-finger Ni/Au was employed in p-side-up DUV LED, where the p-GaN contact layer was partially removed to improve the light extraction efficiency without a serious current-crowding effect. The 9- and 12-finger LEDs were determined to have higher thermal dissipation and lower surface temperatures and correlated well with the theoretical simulation. For the comparison of p-side-up emission LEDs, the output power of 9-finger LED is 172% higher than that of conventional LED at the current injection of 350 mA. The optimum p-electrode pattern was further applied to the flip-chip LED structure. It is determined that the output power of 9-finger flip-chip LED at 350 mA is still 14.6% higher than that of a conventional flip-chip LED. The higher output power of ...

中文翻译：

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改进280 nm AlGaN LED应用的p电极结构

提出了针对p侧朝上和倒装芯片结构的用于发射波长为280nm的AlGaN深紫外发光二极管（DUV LED）的Ni / Au / p + -GaN p电极的改进。在p侧朝上的DUV LED中采用了叉指式多指Ni / Au，其中部分去除了p-GaN接触层以提高光提取效率，而没有严重的电流拥挤效应。确定的9指和12指LED具有更高的散热和更低的表面温度，并且与理论仿真具有很好的相关性。为了比较p侧朝上发射的LED，在注入电流为350 mA时，9指LED的输出功率比传统LED高172％。最佳的p电极图案进一步应用于倒装芯片LED结构。可以确定的是，九指倒装芯片LED在350 mA时的输出功率仍比传统倒装芯片LED高14.6％。更高的输出功率...